IndiumV3, Russie, Analysis, bibRecord, 000C35

Raman study of the topology of InAs/GaAs self-assembled quantum dots

Identifieur interne : 000C35 ( Russie/Analysis ); précédent : 000C34; suivant : 000C36

Raman study of the topology of InAs/GaAs self-assembled quantum dots

Auteurs : RBID : Pascal:99-0439751

Descripteurs français

Pascal (Inist)
- 7830F, 7866F, 6835C, 6835J, 6865, 7320D, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Point quantique semiconducteur, Structure interface, Phonon interface, Spectre Raman, Mode localisé.

English descriptors

KwdEn :
- Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Interface phonons, Interface structure, Localized modes, Raman spectra, Semiconductor quantum dots.

Abstract

The topology of self-assembled InAs/GaAs quantum dots was studied by resonant Raman scattering caused by the interface modes localized near the edges of the dots. Evidences were found that on both sides of the InAs layer containing the dots, their topologies show some resemblances. In addition, in the multilayered systems the evidence of the coalescence of the dots (which form vertical columns) in neighbor layers separated by the distance smaller than 25 monolayers was obtained. © 1999 American Institute of Physics.

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Pascal:99-0439751

Le document en format XML

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   |texte=   Raman study of the topology of InAs/GaAs self-assembled quantum dots
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Raman study of the topology of InAs/GaAs self-assembled quantum dots

Raman study of the topology of InAs/GaAs self-assembled quantum dots

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri